Direct band gap narrowing in highly doped Ge

Empirical determination of the energy band gap narrowing in highly doped n+ silicon

Band Gap Narrowing and Widening of ZnO Nanostructures and Doped Materials

Band gap change in doped ZnO is an observed phenomenon that is very interesting from the fundamental point of view. This work is focused on the preparation of pure and single phase nanostructured ZnO and Cu as well as Mn-doped ZnO for the purpose of understanding the mechanisms of band gap narrowing in the materials. ZnO, Zn0.99Cu0.01O and Zn0.99Mn0.01O materials were prepared using a wet chemi...

Sonochemical synthesis of undoped and Co-doped ZnO nanostructures and investigation of optical and photocatalytic properties

In this paper, undopedZnO and Co-ZnOnano structureswith different molar ratio of Cobalt have been synthesized by the sonochemical method. Structure have been characterized by Fourier Transform (FTIR) and UV–Vis spectroscopy,Scanning Electron Microscopy (SEM), Energy Dispersive Analytical X-Ray (EDAX), and X-Ray Diffraction (XRD) methods. Moreover, the direct band gap has been calculated by Tauc...

Preparation, Characterization and Photocatalytic Activity of Ag-Cd-ZnO and Ag-Cu-ZnO Nanostructures

In this study, ZnO nanopowders and ZnO doped with metals (Cu , Ag- doped ZnO) and (Cd, Ag- doped ZnO) were synthesized by the sol-gel method in order to investigation on the codoping effect on the band gap and photocatalytic activity of ZnO. The synthesized samples are characterized by IR spectroscopy technique. Moreover, the absorption coefficients of the ZnO, Ag-Cd-ZnO and Ag-Cu-ZnO were anal...

Study of Dopant-Dependent Band Gap Narrowing in Compound Semiconductor Devices

Band gap narrowing is one of the crucial heavy-doping effects to be considered for bipolar devices. In case of HBTs, where discontinuities in the energy levels appear, the correct modeling of the energy barriers has basic importance for studying the device performance. Using the physically-based approach from [1], we present a new band gap narrowing model which considers the semiconductor mater...